Parameters¶
8.1 Geometry / phase composition¶
| Parameter | Description | Unit | Default | Range |
|---|---|---|---|---|
area |
Device area (instance) | m² | 1e-12 | [1e-18, ∞) |
p_ferro |
Ferroelectric (orthorhombic) area fraction | 1 | 0.6 | [0, 1] |
8.2 Material stack¶
| Parameter | Description | Unit | Default | Range |
|---|---|---|---|---|
t_fe |
Ferroelectric film thickness | m | 9.8e-9 | [1e-9, 5e-8] |
t_int |
Interface (dead) layer thickness | m | 2e-9 | [1e-10, 2e-8] |
eps_fe |
Rel. permittivity, orthorhombic HZO | 1 | 70 | [1, 100] |
eps_de |
Rel. permittivity, monoclinic HZO | 1 | 20 | [1, 100] |
eps_int |
Rel. permittivity, interface layer | 1 | 70 | [1, 500] |
eps_depl |
Rel. permittivity, electrode-side depletion region | 1 | 2.2 | (0, 100] |
8.3 Polarization dynamics¶
| Parameter | Description | Unit | Default | Range |
|---|---|---|---|---|
w_b |
Switching energy barrier height | eV | 1.05 | (0, ∞) |
d_e |
Ion/jump distance (see §3 unit note) | m (declared m²) | 7.5e-9 | (0, ∞) |
e_off |
Offset (built-in) electric field | V/m | 0 | [-1e9, 1e9] |
p_s |
Saturation polarization density | C/m² | 0.27 | [1e-3, 1] |
8.4 Depletion / screening¶
| Parameter | Description | Unit | Default | Range |
|---|---|---|---|---|
n_depl |
Carrier density, interface depletion region | m⁻³ | 1.4e28 | [1e25, 1e30] |
q_fix_depl_u |
Fixed interface charge, "up" state | (norm.) | -0.08 | [-1, 1] |
q_fix_depl_d |
Fixed interface charge, "down" state | (norm.) | 0.20 | [-1, 1] |
8.5 TAT — ferroelectric layer¶
| Parameter | Description | Unit | Default | Range |
|---|---|---|---|---|
m_eff_fe |
Electron effective mass (×m₀) | 1 | 0.1 | [0.01, ∞) |
phi_b_fe |
Electrode/HfO₂ barrier height | eV | 2.0 | (0, 5] |
n_tr_fe |
Trap density | m⁻³ | 1e25 | [1e18, 1e28] |
w_tr_t_fe |
Trap depth | eV | 2.1 | [0, 5] |
w_tr_rel_fe |
Trap relaxation energy | eV | 1.19 | [0, 5] |
dos_trap_fe |
Trap DOS | m | 1e-8 | [1e-10, 1e40] |
x_c_fe |
TAT characteristic hop length | m | 5e-9 | [1e-10, 1e-7] |
8.6 TAT / FN — interface layer¶
| Parameter | Description | Unit | Default | Range |
|---|---|---|---|---|
m_eff_int |
Electron effective mass (×m₀) | 1 | 0.4 | [0.01, ∞) |
phi_b_int |
Electrode/interface barrier height | eV | 3.1 | (0, 5] |
n_tr_int |
Trap density | m⁻³ | 1e23 | [1e18, 1e28] |
w_tr_t_int |
Trap depth | eV | 3.0 | [0, 5] |
w_tr_rel_int |
Trap relaxation energy | eV | 0.4 | [0, 5] |
dos_trap_int |
Trap DOS | m | 1e-8 | [1e-10, 1e40] |
x_c_int |
TAT characteristic hop length | m | 1e-9 | [1e-10, 1e-7] |
8.7 Monte-Carlo (inherited)¶
| Parameter | Perturbs | Default |
|---|---|---|
area_mc |
area |
0 |
t_fe_mc |
t_fe |
0 |
t_int_mc |
t_int |
0 |
p_s_mc |
p_s (also used deterministically, see §4) |
0 |
n_depl_mc |
n_depl |
0 |